Low price, high purity 2D metal tin(IV) sulfide powder and crystals

For the development of next-generation electronics, optoelectronics, and nanotechnology

Tin(IV) sulfide (also known as tin disulfide SnS₂), CAS number 1315-01-1, is a layered metal dichalcogenide semiconductor with a similar chemical and crystal structure to that of molybdenum disulfide (MoS₂). In each individual layer, Sn is sandwiched between two S layers with strong covalent bonding, whereas individual mono-layers are held by weak van der Waals forces. Individual layers break free when weak van der Waals forces are overcome by either physical or chemical exfoliation.

Like many other two dimensional semiconductors, SnS₂ can undergo exfoliation to form atomic-layer sheets that have applications in FETs, photovolatic solar cells, sensors and photocatalyst applications.

SnS₂is an n-type semiconducting material that has a hexagonal CdI₂-type structure. It has attracted increasing attention as a promising anode materials due to its high theoretical capacity and abundancy.

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≥99.999% Crystal Purity

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Low Cost Tin(IV) Sulfide

Powder & Crystal

Different Forms of Tin(IV) Sulfide

We supply low price tin(IV) sulfide in several different forms for a range of applications.

Tin(IV) Sulfide Powder

Can be used for preparation of tin(IV) sulfide nanoplates and ultrathin films

Sold by weight

≥99.995% purity

From [[price gbp=”220″]]

Tin(IV) Sulfide Crystals by Size

Can be used to produce single or few-layer tin(IV) sulfide sheets via mechanical or liquid exfoliation

Small (≥10 mm²) or medium (≥25 mm²) crystals available*

≥99.999% purity

From [[price gbp=”520″]]

*Typical representative size, areas/dimensions may vary

Bulk single tin(IV) sulfide crystal is most commonly used as sources from which single or few-layer sheets can be obtained via either mechanical or liquid exfoliation.

Tin(IV) sulfide powder can also be used to prepare SnS₂ nanosheets and nanoparticles by liquid-exfoliation (normally assisted by sonication). Cu intercalated bilayer SnS₂ displays a hole field-effect mobility of ~40 cm² V⁻¹s⁻¹, and Co-SnS₂ exhibits a metal-like behaviour with sheet resistance comparable to that of few-layer graphene.

Technical Data

CAS Number	1315-01-1
Chemical Formula	SnS₂
Molecular Weight	182.83 g/mol
Bandgap	2.2 eV
Preparation	Synthetic – Chemical Vapour Transport (CVT)
Structure	Hexagonal (2H)
Electronic Properties	2D CDW materials
Melting Point	N/A
Colour	Dark brown
Synonyms	Tin disulfide, Stannic sulfide, Tin sulfide (S₂Sn), Mosaic gold
Classification / Family	Transition metal dichalcogenides (TMDCs), 2D semiconductor materials, NIR band-gap, Nano-electronics, Nano-photonics, Transistors, Photovoltaics, Materials science

Product Details

Form	Purity
Powder	≥99.995%
Crystal	≥99.999%

Pricing Table

Product Code	Form	Size/Weight*	Price
M2114C1	Powder	500 mg	[[price gbp=”220″]]
M2114C1	Powder	1 g	[[price gbp=”350″]]
M2114A10	Crystal	Small (≥10 mm²)	[[price gbp=”520″]] ea.
M2114A25	Crystal	Medium (≥25 mm²)	[[price gbp=”850″]] ea.
M2114A00	Crystal	Large (≥100 mm²)	[[price gbp=”1800″]] ea.

*Typical representative size, areas/dimensions may vary

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MSDS Documents

Tin(IV) sulfide powder

Tin(IV) sulfide crystal

Structure of Tin(IV) Sulfide

Tin(IV) sulfide (SnS₂) has a layered structure, where each Sn ion coordinates to six S ions in a regular octahedron. Each sheet of Sn atoms is sandwiched between two sheets of S atoms, and each S-Sn-S layer is held by weak van de Vaals interactions.

SnS₂ crystallises with a standard hexagonal crystal structure (2H-SnS₂) which is identical to that of 1T-MoS₂. Monolayers of 2H-SnS₂ are stacked precisely on top of one another to form the 2H-polytype of bulk SnS₂. It is noted that the 2H-SnS₂ structure is different from that of 2H-MoS₂, where the Mo atom possesses a trigonal prismatic coordination instead.

SnS2 crystal structure — Top and side view of single-layer tin(IV) sulfide (2H-SnS₂)

Properties of 2D Tin(IV) Sulfide

After exfoliation of crystals or powder, tin(IV) sulfide typically has the following properties:

Hexagonal (2H) structure (space group: P3m1)
Earth-abundant, non-toxic, and chemically stable
n-type semiconducting material with band-gap of 2.2–2.35 eV

Applications of Tin(IV) Sulfide

Tin(IV) sulfide single crystals can be used to prepare monolayer and few-layer SnS₂ by mechanical or liquid exfoliation. Tin(IV) sulfide powder is suitable for liquid chemical exfoliation to prepare SnS₂ nanosheets and nanoparticles down to few-layer films.

With high sensitivity and high surface activity, exfoliated SnS₂single or few-layer ultra-thin films from bulk crystal and powder have also been used in applications ranging from light emitters, field effect transistors (FETs), gas sensors, photodetectors, thermoelectric photovoltaic and energy storage devices such as for applications Li-ion batteries

With a band-gap of 2.2–2.35 eV, hexagonal SnS₂ has been used for efficient visible-light water-splitting. It is earth-abundant, non-toxic, and chemically stable in both acidic or neutral aqueous solutions. Physical or liquid exfoliated SnS₂single or few-layer ultra-thin films from bulk crystal and powder have also been used in applications ranging from light emitters, field effect transistors (FETs), gas sensors, photodetectors, thermoelectric photovoltaic and energy storage devices

Literature and Reviews

Tin Disulfide—An Emerging Layered Metal Dichalcogenide Semiconductor: Materials Properties and Device Characteristics, Y, Huang et al., ACS Nano, 8 (10), 10743–10755 (2014); DOI: 10.1021/nn504481r.
Low-Frequency Raman Spectroscopy of Few-Layer 2H-SnS2, T. Sriv et al., Sci. Rep., 8 10194 (2018); DOI:10.1038/s41598-018-28569-6.
Effect of strain on electronic and magnetic properties of Fe-doped monolayer SnS2, Y. Liu et al., Phy. Lett. A, 381, 1732–1737 (2017); DIO: 10.1016/j.physleta.2017.03.034.

Electronic and optical properties of single crystal SnS2: an earth-abundant disulfide photocatalyst, L. Burton et al., J. Mater. Chem. A, 4, 1312 (2016); DOI: 10.1039/c5ta08214e.
Large-Size Growth of Ultrathin SnS2 Nanosheets and High Performance for Phototransistors, X. Zhou et al., Adv. Funct. Mater., 26, 4405–4413 (2016); DOI: 10.1002/adfm.201600318.
Freestanding Tin Disulfide Single‐Layers Realizing Efficient Visible‐Light Water Splitting, Y. Sun et al., Angew. Chem., 124, 8857 –8861 (2012); DOI: 10.1002/ange.201204675.
Two-Dimensional Tin Disulfide Nanosheets for Enhanced Sodium Storage, W. Sun et al., ACS Nano, 9 (11), 11371–11381 (2015); DOI: 10.1021/acsnano.5b05229.
Pomegranate-like heterostructured SnS2/CoS2 particles encapsulated in S, N dual-doped carbon framework enabling high-rate and durable sodium ion storage, Y. Li et al., Journal of Alloys and Compounds, (2024); DOI: 10.1016/j.jallcom.2024.174266.

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Viscoelastic Transfer of 2D Material Using PDMS

Viscoelastic transfer using polydimethylsiloxane (PDMS) stamps is one of the methods used for the deterministic placement of 2D materials and the fabrication of van der Waals heterostructures. It relies on the viscoelasticity of PDMS, which behaves as an elastic solid on short time scales, but as a viscous fluid on long time scales.

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